PART |
Description |
Maker |
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
RJK6009DPP RJK6009DPP-00-T2 |
18 A, 600 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FN, 3 PIN Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
PS7160-1A PS7160L-1A PS7160L-1A-E4 PS7160L-1A-E4-A |
6-PIN DIP, 600 V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET 6引脚DIP600伏电压打通道光学耦合场效应晶体管
|
California Eastern Laboratories, Inc. CEL[California Eastern Labs]
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK1274 2SK1274-T |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS type field effect transistor
|
NEC[NEC] Toshiba Semiconductor
|
2SK2055 D11226EJ1V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|
2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|